QL80S4Hx-Y
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QL80S4Hx-Y QL80S4Hx-Y pin

808nm, 500mW Infra-Red Laser Diode

QL80S4Hx-Y

Feature

QSI Infra-Red Laser Diode
Wavelength: 808nm (typ.)
Output Power: 500mW
Package: TO5 (RoHS compliant)
TM Polarisation
Built-in Monitor Photodiode

Applications

Medical Device
Measurement

Driver ICs

This diode is best driven using the following IC Haus driver:
iC-WKN
iC-WKM
iC-WKP
iC-NZN
iC-NZP
iC-HK
iC-HB

Pin options

This diode is available in the following pin types:
QL80S4HA-Y – N-type (see Fig.1 below)
QL80S4HB-Y – M-type (see Fig.2 below)
QL80S4HC-Y – P-type (see Fig.3 below)
QL80S4HD-Y – D-type (see Fig.4 below)
QL80S4HE-Y – E-type (see Fig.5 below)
SKU: 808nm, 500mW Infra-Red Laser Diode Category: Tags: , , ,

Product Description

Absolute Maximum Ratings

(Ta=25°C)
Items
Symbols
Values
Units
Optical Output
Power
Po
500
mW
Reverse
Voltage
VR
+2
V
Operating
Current
IF
700
mA
Operating
Temperature
Topr
-10 to +40
°C
Storage
Temperature
Tstg
-40 to +85
°C

Electrical and Optical Characteristics

(Ta=25°C)
Item
Symbols
Min.
Typ.
Max.
Unit
Condition
Optical Output
Power
Po
–
500
–
mW
–
Threshold
Current
Ith
–
100
200
mA
Po=500mW
Operating
Current
Iop
–
550
700
mA
Po=500mW
Differential
Efficiency
η
–
–
–
mW/mA
Po=500mW
Operating
Voltage
Vop
–
2.2
3.0
V
Po=500mW
Peak
Wavelength
λp
803
808
813
nm
Po=500mW
Monitor
Current
Im
–
–
–
mA
Po=500mW
Beam *4
Divergence
Θ/ / Θ⊥
4.0 / 20
8.0 / 30
17.0 / 40
deg
Po=500mW
Beam
Angle
ΔΘ// / ΔΘ⊥
-3 / -3
–
+3 / +3
deg
Po=500mW

Additional Information

Colour

InfraRed (780 – 980nm)
Wavelength

808nm
Power Output

500mW
Operating Voltage

2.2 Typ. 3.0 Max.
Operating Current

700
PIN Type

M or B (inc. PD), N or A (inc. PD), P or C (inc. PD)
Driver IC

iC-HB, iC-HK, iC-NZN, iC-NZP, iC-WKM, iC-WKN, iC-WKP

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