QL80R4Sx-Z5
Feature
QSI Infra-Red Laser Diode
Wavelength: 808nm (typ.)
Output Power: 200mW
Package: TO18 (RoHS compliant)
TE Polarisation
Built-in Monitor Photodiode
Applications
Medical Device
Industrial Module
Driver ICs
This diode is best driven using the following IC Haus driver:
Pin options
This diode is available in the following pin types:
QL80R4SA-Z5 – N-type (Fig.1 above)
QL80R4SB-Z5 – M-type (Fig.2 above)
QL80R4SC-Z5 – P-type (Fig.3 above)
QL80R4SD-Z5 – E-type (Fig.4 above)
QL80R4SE-Z5 – H-type (Fig.5 above)
Description
Absolute Maximum Ratings
(Ta=25°C)
Items
|
Symbols
|
Values
|
Units
|
Optical Output
Power |
Po
|
200
|
mW
|
Reverse
Voltage |
VR
|
+2
|
V
|
Operating
Current |
IF
|
280
|
mA
|
Operating
Temperature |
Topr
|
-10 to +40
|
°C
|
Storage
Temperature |
Tstg
|
-40 to +85
|
°C
|
Electrical and Optical Characteristics
(Ta=25°C)
Item
|
Symbols
|
Min.
|
Typ.
|
Max.
|
Unit
|
Condition
|
Optical Output
Power |
Po
|
–
|
200
|
–
|
mW
|
–
|
Threshold
Current |
Ith
|
–
|
55
|
80
|
mA
|
Po=200mW
|
Operating
Current |
Iop
|
–
|
235
|
280
|
mA
|
Po=200mW
|
Differential
Efficiency |
η
|
–
|
–
|
–
|
mW/mA
|
Po=200mW
|
Operating
Voltage |
Vop
|
–
|
1.9
|
2.5
|
V
|
Po=200mW
|
Peak
Wavelength |
λp
|
803
|
808
|
813
|
nm
|
Po=200mW
|
Monitor
Current |
Im
|
–
|
0.5
|
2.0
|
mA
|
Po=200mW
|
Beam *4
Divergence |
Θ// / Θ⊥
|
–
|
8.0 / 35
|
12.0 / 45
|
deg
|
Po=200mW
|
Beam
Angle |
ΔΘ// / ΔΘ⊥
|
-3 / -3
|
–
|
+3 / +3
|
deg
|
Po=200mW
|
Additional information
Colour | InfraRed (780 – 980nm) |
---|---|
Wavelength | 808nm |
Operating Voltage | 1.9 Typ. 2.5 Max. |
Power Output | 200mW |
Operating Current | 280 |
PIN Type | E (no PD), H (no PD), M or B (inc. PD), N or A (inc. PD), P or C (inc. PD) |
Package Type | TO-18 |
Driver IC | iC-HB, iC-HK, iC-NZN, iC-NZP, iC-WKM, iC-WKN, iC-WKP |