QL80T4Hx-Y
Feature
QSI Infra-Red Laser Diode
Wavelength: 808nm (typ.)
Output Power: 1000mW
Package: TO18 (RoHS compliant)
TM Polarisation
Built-in Monitor Photodiode
Applications
Medical Device
Measurement
Driver ICs
This diode is best driven using the following IC Haus driver:
Pin options
This diode is available in the following pin types:
QL80T4HA-Y – N-type (see Fig.1 below)
QL80T4HB-Y – M-type (see Fig.2 below)
QL80T4HC-Y – P-type (see Fig.3 below)
QL80T4HD-Y – D-type (see Fig.4 below)
QL80T4HE-Y – E-type (see Fig.5 below)
Description
Absolute Maximum Ratings
(Ta=25°C)
|
Items
|
Symbols
|
Values
|
Units
|
|
Optical Output
Power |
Po
|
1000
|
mW
|
|
Reverse
Voltage |
VR
|
+2
|
V
|
|
Operating
Current |
IF
|
1500
|
mA
|
|
Operating
Temperature |
Topr
|
-10 to +40
|
°C
|
|
Storage
Temperature |
Tstg
|
-40 to +85
|
°C
|
Electrical and Optical Characteristics
(Ta=25°C)
|
Item
|
Symbols
|
Min.
|
Typ.
|
Max.
|
Unit
|
Condition
|
|
Optical Output
Power |
Po
|
–
|
1000
|
–
|
mW
|
–
|
|
Threshold
Current |
Ith
|
–
|
250
|
300
|
mA
|
Po=1000mW
|
|
Operating
Current |
Iop
|
–
|
1100
|
1500
|
mA
|
Po=1000mW
|
|
Differential
Efficiency |
η
|
–
|
1
|
2
|
mW/mA
|
Po=1000mW
|
|
Operating
Voltage |
Vop
|
–
|
2.0
|
2.5
|
V
|
Po=1000mW
|
|
Peak
Wavelength |
λp
|
785
|
808
|
830
|
nm
|
Po=1000mW
|
|
Monitor
Current |
Im
|
–
|
–
|
–
|
mA
|
Po=1000mW
|
|
Beam *4
Divergence |
Θ// / Θ⊥
|
–
|
7.0 / 30
|
12.0 / 40
|
deg
|
Po=1000mW
|
|
Beam
Angle |
ΔΘ// / ΔΘ⊥
|
-3 / -3
|
–
|
+3 / +3
|
deg
|
Po=1000mW
|
Additional information
| Colour | InfraRed (780 – 980nm) |
|---|---|
| Wavelength | 808nm |
| Power Output | 1000mW |
| Operating Voltage | 2.0 Typ. 2.5 Max. |
| Operating Current | 1500 |
| PIN Type | M or B (inc. PD), N or A (inc. PD), P or C (inc. PD) |
| Package Type | TO-18 |
| Driver IC | iC-HB, iC-HK, iC-NZN, iC-NZP, iC-WKM, iC-WKN, iC-WKP |
