QL85D6SA
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QL85D6SA QL85D6SA pin

850nm, 10mW Infra-Red Laser Diode

QL85D6SA

Feature

QSI Infra-Red Laser Diode
Wavelength: 850nm (typ.)
Output Power: 10mW
Package: TO18 (RoHS compliant)
Built-in Monitor Photodiode

Applications

Industrial Sensors
Industrial Module

Driver ICs

This diode is best driven using the following IC Haus driver:
SKU: 850nm, 10mW Infra-Red Laser Diode Category: Tags: , , ,

Product Description

Absolute Maximum Ratings

(Ta=25°C)
Items
Symbols
Values
Units
Optical Output
Power
Po
12
mW
Reverse
Voltage
VR
+2
V
Operating
Current
IF
35
mA
Operating
Temperature
Topr
-10 to +60
°C
Storage
Temperature
Tstg
-40 to +85
°C

Electrical and Optical Characteristics

(Ta=25°C)
Item
Symbols
Min.
Typ.
Max.
Unit
Condition
Optical Output
Power
Po
10
12
mW
Threshold
Current
Ith
5
10
20
mA
Po=10mW
Operating
Current
Iop
15
25
35
mA
Po=10mW
Differential
Efficiency
η
0.4
0.7
0.9
mW/mA
Po=10mW
Operating
Voltage
Vop
1.9
2.5
V
Po=10mW
Peak
Wavelength
λp
845
850
855
nm
Po=10mW
Monitor
Current
Im
0.1
0.3
0.5
mA
Po=10mW
Beam *4
Divergence
Θ// / Θ
7.0 / 25
9.0 / 32
12.0 / 40
deg
Po=10mW
Beam
Angle
ΔΘ// / ΔΘ
-2 / -3
+2 / +3
deg
Po=10mW

Additional Information

Colour

InfraRed (780 – 980nm)

Wavelength

850nm

Power Output

10mW

Operating Voltage

1.9 Typ. 2.5 Max.

Operating Current

35

PIN Type

N or A (inc. PD)

Package Type

TO-18

Driver IC

iC-HB, iC-HK, iC-NZN, iC-WKN


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