QL80D6Sx-Z
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QL80D6Sx-Z QL80D6Sx-Z pin

808nm, 5mW Infra-Red Laser Diode

QL80D6Sx-Z

Feature

QSI Infra-Red Laser Diode
Wavelength: 808nm (typ.)
Output Power: 5mW
Package: TO18 (RoHS compliant)
TE Polarisation
Built-in Monitor Photodiode

Applications

Medical Device
Industrial Module

Driver ICs

This diode is best driven using the following IC Haus driver:
iC-WKN
iC-WKM
iC-WKP
iC-NZN
iC-NZP
iC-HK
iC-HB

Pin options

This diode is available in the following pin types:
QL80D6SA-Z – N-type
QL80D6SB-Z – M-type
QL80D6SC-Z – P-type
QL80D6SD-Z – E-type
QL80D6SE-Z – H-type
SKU: 808nm, 5mW Infra-Red Laser Diode Category: Tags: , , , , , ,

Product Description

Absolute Maximum Ratings

(Ta=25°C)
Items
Symbols
Values
Units
Optical Output
Power
Po
8
mW
Reverse
Voltage
VR
+2
V
Operating
Current
IF
35
mA
Operating
Temperature
Topr
-10 to +60
°C
Storage
Temperature
Tstg
-40 to +85
°C

Electrical and Optical Characteristics

(Ta=25°C)
Item
Symbols
Min.
Typ.
Max.
Unit
Condition
Optical Output
Power
Po
–
5
8
mW
–
Threshold
Current
Ith
–
21
30
mA
Po=5mW
Operating
Current
Iop
–
27
35
mA
Po=5mW
Differential
Efficiency
η
–
–
–
mW/mA
Po=5mW
Operating
Voltage
Vop
–
1.9
2.3
V
Po=5mW
Peak
Wavelength
λp
798
808
818
nm
Po=5mW
Monitor
Current
Im
0.1
0.3
0.7
mA
Po=5mW
Beam *4
Divergence
Θ// / Θ⊥
6.0 / 20
8.0 / 30
12.0 / 40
deg
Po=5mW
Beam
Angle
ΔΘ// / ΔΘ⊥
-3 / -3
–
+3 / +3
deg
Po=5mW

Additional Information

Colour

InfraRed (780 – 980nm)
Wavelength

808nm
Power Output

5mW
Operating Voltage

1.9 Typ. 2.3 Max.
Operating Current

35
PIN Type

E (no PD), H (no PD), M or B (inc. PD), N or A (inc. PD), P or C (inc. PD)
Package Type

TO-18
Driver IC

iC-HB, iC-HK, iC-NZN, iC-NZP, iC-WKM, iC-WKN, iC-WKP

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